 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2 - 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features * High Output Power: 18.0 dBm Typical P 1 dB at 12 GHz * High Gain: 9.0 dB Typical GSS at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available[1] Description The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25C Symbol GSS NFO GA P1 dB gm IDSS VP Parameters and Test Conditions Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA Optimum Noise Figure: VDS = 3 V, IDS = 10 mA Gain @ NFO: VDS = 3 V, IDS = 10 mA Power Output @ 1 dB Gain Compression: VDS = 5 V, IDS = 30 mA Transconductance: VDS = 3 V, VGS = 0 V Saturated Drain Current: VDS = 3 V, VGS = 0 V Pinch-off Voltage: VDS = 3 V, IDS = 1 mA f = 12.0 GHz f = 12.0 GHz f = 12.0 GHz Units dB dB dB 15.0 15 30 -3.5 Min. 7.0 Typ. Max. 9.0 2.2 6.0 18.0 35 50 -1.5 90 -0.5 f = 12.0 GHz dBm mmho mA V Note: 1. Refer to PACKAGING section "Tape-and-Reel Packaging for Surface Mount Semiconductors." 5-67 5965-8704E ATF-26836 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Units V V V mA mW C C Absolute Maximum[1] + 7 -4 -8 IDSS 275 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 2.9 mW/C for TCASE >79C. 4. Storage above +150C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information. Thermal Resistance: Liquid Crystal Measurement: jc = 350C/W; TCH = 150C 1 m Spot Size[5] Part Number Ordering Information Part Number ATF-26836-TR1 ATF-26836-STR Devices Per Reel 1000 10 Reel Size 7" strip ATF-26836 Typical Performance, TA = 25C 25 25 20 MSG 20 MSG GAIN (dB) 10 GAIN (dB) 15 15 10 MAG 5 |S21|2 5 |S21|2 0 2.0 4.0 6.0 8.0 10.0 12.0 16.0 0 2.0 4.0 6.0 8.0 10.0 12.0 16.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 5 V, IDS = 30 mA. Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 10 mA. 5-68 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 3 V, IDS = 10 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .94 .90 .84 .75 .64 .52 .49 .52 .56 .61 .67 .69 .72 .72 .72 Ang. -38 -55 -72 -92 -117 -155 163 126 100 78 58 45 35 22 13 dB 8.2 7.8 7.6 8.0 8.1 8.3 7.9 7.2 6.4 5.6 4.7 3.9 3.0 2.5 2.0 S21 Mag. 2.57 2.45 2.41 2.50 2.55 2.60 2.47 2.30 2.10 1.91 1.71 1.57 1.42 1.33 1.26 Ang. 138 120 102 82 61 37 14 -7 -28 -47 -66 -83 -98 -115 -128 dB -27.1 -24.9 -22.9 -20.6 -19.3 -18.1 -17.5 -16.9 -16.8 -17.1 -17.1 -17.3 -17.2 -17.2 -17.4 S12 Mag. .044 .057 .072 .093 .109 .124 .133 .143 .144 .140 .139 .137 .138 .138 .135 S22 Ang. 60 51 44 30 15 5 -12 -21 -32 -41 -49 -61 -66 -77 -85 Mag. .74 .71 .71 .66 .60 .51 .41 .30 .24 .18 .15 .17 .19 .23 .27 Ang. -26 -35 -44 -53 -64 -78 -92 -106 -125 -154 168 134 107 89 71 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 5 V, IDS = 30 mA Freq. GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .94 .86 .78 .68 .57 .43 .37 .40 .47 .55 .61 .71 .71 .65 .58 Ang. -44 -63 -81 -97 -118 -151 165 122 96 75 53 33 10 -10 -30 dB 9.0 8.5 8.0 7.9 8.1 8.5 8.5 8.0 7.7 7.5 7.4 7.4 6.7 5.7 4.2 S21 Mag. 2.82 2.65 2.51 2.49 2.53 2.65 2.66 2.52 2.42 2.37 2.35 2.34 2.17 1.93 1.62 Ang. 130 110 89 71 51 28 3 -20 -42 -66 -88 -116 -143 -170 166 dB -30.2 -28.4 -26.9 -25.5 -24.4 -22.4 -20.6 -18.0 -16.4 -15.1 -13.8 -13.2 -13.5 -14.0 -14.9 S12 Mag. .031 .038 .045 .053 .060 .076 .093 .126 .152 .176 .205 .220 .212 .200 .180 S22 Ang. 65 56 47 41 39 38 30 15 3 -4 -19 -39 -56 -72 -93 Mag. .80 .80 .79 .78 .76 .73 .69 .64 .66 .63 .64 .71 .78 .85 .98 Ang. -31 -43 -52 -58 -67 -80 -99 -119 -140 -166 168 132 104 79 61 A model for this device is available in the DEVICE MODELS section. 5-69 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 4 DRAIN 3 0.508 (0.020) 2.11 (0.083) DIA. GATE 1 268 SOURCE 1.45 0.25 (0.057 0.010) 2 2.54 (0.100) 0.15 0.05 (0.006 0.002) 0.56 (0.022) 4.57 0.25 0.180 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = 0.005 mm .xx = 0.13 5-70 |
Price & Availability of ATF-26836
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |